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The Schottky barrier contribution to photoacoustic effect in Au-Si system

dc.creatorTodorović, D. M.
dc.creatorNikolić, P.M.
dc.creatorSmiljanić, Miloljub
dc.creatorPetrović, R.
dc.creatorBojicić, A.I.
dc.creatorVasiljević-Radović, Dana
dc.creatorRadulović, Katarina
dc.date.accessioned2019-01-30T17:09:21Z
dc.date.available2019-01-30T17:09:21Z
dc.date.issued2000
dc.identifier.isbn0-7803-5235-1
dc.identifier.urihttps://cer.ihtm.bg.ac.rs/handle/123456789/25
dc.description.abstractThe photoacoustic effect in metal-semiconductor system, i.e., the influence of Schottky barrier on the thermal and electronic transport processes in semiconductor was investigated. The amplitude and phase spectra were measured for dependence on the modulation frequency of excitation optical beam, using the PA frequency transmission technique. Thermal, elastic and electronic transport parameters were obtained by the analysis of experimental and theoretical PA signals, including the Schottky barrier effect, for a metal film-semiconductor substrate sample.en
dc.publisherIEEE Computer Society
dc.rightsrestrictedAccess
dc.source22nd International Conference on Microelectronics, MIEL 2000 - Proceedings
dc.subjectSchottky barriers
dc.subjectPhotoacoustic effects
dc.subjectFrequency measurement
dc.subjectPhase measurement
dc.subjectSignal analysis
dc.titleThe Schottky barrier contribution to photoacoustic effect in Au-Si systemen
dc.typeconferenceObject
dc.rights.licenseARR
dcterms.abstractВасиљевић-Радовић, Дана; Радуловић, Катарина; Смиљанић, Милољуб; Тодоровић, Д. М.; Николић, П.М.; Петровић, Р.; Бојицић, A.И.;
dc.citation.volume1
dc.citation.spage189
dc.citation.epage192
dc.citation.other1: 189-192
dc.identifier.doi10.1109/ICMEL.2000.840552
dc.identifier.scopus2-s2.0-84906315176
dc.type.versionpublishedVersion


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