Prevention of Convex Corner Undercutting in Fabrication of Silicon Microcantilevers by Wet Anisotropic Etching
Abstract
This paper presents microcantilever fabrication on {100} oriented Si substrate using bulk micromachining technique. Detailed characteristics of convex corner compensation design for {100} oriented beam for two etching solutions: 25 wt. % TMAH and 30 wt. % KOH water solutions at 80 degrees C are given.
Source:
Proceedings of the International Conference on Microelectronics, ICM, 2014, 163-166Publisher:
- Institute of Electrical and Electronics Engineers Inc.
Funding / projects:
- Micro- Nanosystems and Sensors for Electric Power and Process Industry and Environmental Protection (RS-MESTD-Technological Development (TD or TR)-32008)
DOI: 10.1109/MIEL.2014.6842111
ISSN: 2159-1660
WoS: 000360788600031
Scopus: 2-s2.0-84904704435
Collections
Institution/Community
IHTMTY - CONF AU - Jović, Vesna AU - Lamovec, Jelena AU - Mladenović, Ivana AU - Smiljanić, Milče AU - Popović, Bogdan PY - 2014 UR - https://cer.ihtm.bg.ac.rs/handle/123456789/1451 AB - This paper presents microcantilever fabrication on {100} oriented Si substrate using bulk micromachining technique. Detailed characteristics of convex corner compensation design for {100} oriented beam for two etching solutions: 25 wt. % TMAH and 30 wt. % KOH water solutions at 80 degrees C are given. PB - Institute of Electrical and Electronics Engineers Inc. C3 - Proceedings of the International Conference on Microelectronics, ICM T1 - Prevention of Convex Corner Undercutting in Fabrication of Silicon Microcantilevers by Wet Anisotropic Etching SP - 163 EP - 166 DO - 10.1109/MIEL.2014.6842111 ER -
@conference{ author = "Jović, Vesna and Lamovec, Jelena and Mladenović, Ivana and Smiljanić, Milče and Popović, Bogdan", year = "2014", abstract = "This paper presents microcantilever fabrication on {100} oriented Si substrate using bulk micromachining technique. Detailed characteristics of convex corner compensation design for {100} oriented beam for two etching solutions: 25 wt. % TMAH and 30 wt. % KOH water solutions at 80 degrees C are given.", publisher = "Institute of Electrical and Electronics Engineers Inc.", journal = "Proceedings of the International Conference on Microelectronics, ICM", title = "Prevention of Convex Corner Undercutting in Fabrication of Silicon Microcantilevers by Wet Anisotropic Etching", pages = "163-166", doi = "10.1109/MIEL.2014.6842111" }
Jović, V., Lamovec, J., Mladenović, I., Smiljanić, M.,& Popović, B.. (2014). Prevention of Convex Corner Undercutting in Fabrication of Silicon Microcantilevers by Wet Anisotropic Etching. in Proceedings of the International Conference on Microelectronics, ICM Institute of Electrical and Electronics Engineers Inc.., 163-166. https://doi.org/10.1109/MIEL.2014.6842111
Jović V, Lamovec J, Mladenović I, Smiljanić M, Popović B. Prevention of Convex Corner Undercutting in Fabrication of Silicon Microcantilevers by Wet Anisotropic Etching. in Proceedings of the International Conference on Microelectronics, ICM. 2014;:163-166. doi:10.1109/MIEL.2014.6842111 .
Jović, Vesna, Lamovec, Jelena, Mladenović, Ivana, Smiljanić, Milče, Popović, Bogdan, "Prevention of Convex Corner Undercutting in Fabrication of Silicon Microcantilevers by Wet Anisotropic Etching" in Proceedings of the International Conference on Microelectronics, ICM (2014):163-166, https://doi.org/10.1109/MIEL.2014.6842111 . .