Photoacoustic elastic bending in thin film-substrate system: Experimental determination of the thin film parameters

Abstract

The aim of this work is the development of photoacoustic (PA) method for the measurement and determination of parametres of thin films (with a thickness of less than 1 mu m). Experimental study of the optical, thermal, and elastic characteristics of the thin film on Si substrate by PA elastic bending method was given. Thin film-semiconductor (Si) sample is modeled by simultaneous analysis of the plasma, thermal, and elastic wave equations. Two normalization procedures of the PA elastic bending signal in function of the modulation frequency of the optical excitation were established. The experimental PA elastic bending signals were measured and analysed. Without loss of generality, the TiO2 thin film (with a thickness of 0.5 mu m) on Si substrate (circular plate) was experimentaly studied. We have studied the PA elastic bending signals in order to obtain the values of optical, thermal, and elastic parameters of TiO2 film. The analysis shows that it is possible to develop noncontact and nondestructive experimental method-PA elastic bending method for thin film study, with possibility to obtain the optical, thermal, and elastic parameters of the film thinner than 1 mu m.