Приказ основних података о документу

dc.creatorKrstajić, Predrag
dc.creatorVasilopoulos, Panagiotis
dc.date.accessioned2019-01-30T17:33:10Z
dc.date.available2019-01-30T17:33:10Z
dc.date.issued2012
dc.identifier.issn1098-0121
dc.identifier.urihttps://cer.ihtm.bg.ac.rs/handle/123456789/1131
dc.description.abstractAnalytical expressions for the Hall conductivity sigma(yx) and the longitudinal resistivity rho(xx) are derived in gapped, single-layer graphene using linear response theory. The gap 2 Delta, described by a mass term, is induced by a substrate made of hexagonal boron nitride (h-BN) and produces two levels at +/-Delta. It is shown that syx has the same form as for a graphene sample supported by a common substrate without a mass term. The differences are a shift in the energy spectrum, which is not symmetric with respect to the Dirac point for either valley due to the gap, the absence of a zero-energy Landau level, and the nonequivalence of the K and K' valleys. In addition, the dispersion of the energy levels, caused by electron scattering by impurities, modifies mostly plateaus due to the levels at +/-Delta. It is shown that the resistivity rho(xx) exhibits an oscillatory dependence on the electron concentration. The main difference with the usual graphene samples, on SiO2 substrates, occurs near zero concentration, as the energy spectra differ mostly near the Dirac point.en
dc.publisherAmer Physical Soc, College Pk
dc.relationinfo:eu-repo/grantAgreement/MESTD/Technological Development (TD or TR)/32008/RS//
dc.relationCanadian NSERC - OGP0121756
dc.rightsopenAccess
dc.sourcePhysical Review B
dc.titleInteger quantum Hall effect in gapped single-layer grapheneen
dc.typearticle
dc.rights.licenseARR
dcterms.abstractВасилопоулос, П.; Крстајић, Предраг;
dc.citation.volume86
dc.citation.issue11
dc.citation.spage115432
dc.citation.other86(11):
dc.citation.rankM21
dc.identifier.doi10.1103/PhysRevB.86.115432
dc.identifier.fulltexthttps://cer.ihtm.bg.ac.rs/bitstream/id/7672/1129.pdf
dc.identifier.scopus2-s2.0-84867019296
dc.identifier.wos000309173300005
dc.type.versionpublishedVersion


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Приказ основних података о документу