Wide Band-stop Microwave Microstrip Filter on High-resistivity Silicon
Само за регистроване кориснике
2012
Чланак у часопису (Објављена верзија)
Метаподаци
Приказ свих података о документуАпстракт
Low-resistivity silicon (standard CMOS-grade silicon) is a troublesome issue for the microwave passive components. One solution is using high-resistivity silicon (HRS). Wide band-stop filter on high-resistivity silicon (HRS), 5 k Omega-cm, is introduced. The filter is simulated and successfully fabricated in microstrip technology. Relative stop band width is over 70 % for 20 dB suppression. Reflection, S11, in the pass band is -17 dB or lower. Metallization was sputterd aluminum (Al) and silver epoxy was used for bonding.
Кључне речи:
Microwave / High-resistivity silicon (HRS) / Band-stop filter / Sputtered aluminum (Al)Извор:
Informacije Midem-Journal of Microelectronics Electronic Components and Materials, 2012, 42, 4, 282-286Издавач:
- Soc Microelectronics, Electron Components Materials-Midem, Ljubljjana
Финансирање / пројекти:
- Reinforcement of Regional Microsystems and Nanosystems Centre (EU-205533)
- Микро, нано-системи и сензори за примену у електропривреди, процесној индустрији и заштити животне средине (RS-32008)
Институција/група
IHTMTY - JOUR AU - Nešić, Dušan AU - Jokić, Ivana AU - Frantlović, Miloš AU - Sarajlić, Milija PY - 2012 UR - https://cer.ihtm.bg.ac.rs/handle/123456789/1080 AB - Low-resistivity silicon (standard CMOS-grade silicon) is a troublesome issue for the microwave passive components. One solution is using high-resistivity silicon (HRS). Wide band-stop filter on high-resistivity silicon (HRS), 5 k Omega-cm, is introduced. The filter is simulated and successfully fabricated in microstrip technology. Relative stop band width is over 70 % for 20 dB suppression. Reflection, S11, in the pass band is -17 dB or lower. Metallization was sputterd aluminum (Al) and silver epoxy was used for bonding. PB - Soc Microelectronics, Electron Components Materials-Midem, Ljubljjana T2 - Informacije Midem-Journal of Microelectronics Electronic Components and Materials T1 - Wide Band-stop Microwave Microstrip Filter on High-resistivity Silicon VL - 42 IS - 4 SP - 282 EP - 286 UR - https://hdl.handle.net/21.15107/rcub_cer_1080 ER -
@article{ author = "Nešić, Dušan and Jokić, Ivana and Frantlović, Miloš and Sarajlić, Milija", year = "2012", abstract = "Low-resistivity silicon (standard CMOS-grade silicon) is a troublesome issue for the microwave passive components. One solution is using high-resistivity silicon (HRS). Wide band-stop filter on high-resistivity silicon (HRS), 5 k Omega-cm, is introduced. The filter is simulated and successfully fabricated in microstrip technology. Relative stop band width is over 70 % for 20 dB suppression. Reflection, S11, in the pass band is -17 dB or lower. Metallization was sputterd aluminum (Al) and silver epoxy was used for bonding.", publisher = "Soc Microelectronics, Electron Components Materials-Midem, Ljubljjana", journal = "Informacije Midem-Journal of Microelectronics Electronic Components and Materials", title = "Wide Band-stop Microwave Microstrip Filter on High-resistivity Silicon", volume = "42", number = "4", pages = "282-286", url = "https://hdl.handle.net/21.15107/rcub_cer_1080" }
Nešić, D., Jokić, I., Frantlović, M.,& Sarajlić, M.. (2012). Wide Band-stop Microwave Microstrip Filter on High-resistivity Silicon. in Informacije Midem-Journal of Microelectronics Electronic Components and Materials Soc Microelectronics, Electron Components Materials-Midem, Ljubljjana., 42(4), 282-286. https://hdl.handle.net/21.15107/rcub_cer_1080
Nešić D, Jokić I, Frantlović M, Sarajlić M. Wide Band-stop Microwave Microstrip Filter on High-resistivity Silicon. in Informacije Midem-Journal of Microelectronics Electronic Components and Materials. 2012;42(4):282-286. https://hdl.handle.net/21.15107/rcub_cer_1080 .
Nešić, Dušan, Jokić, Ivana, Frantlović, Miloš, Sarajlić, Milija, "Wide Band-stop Microwave Microstrip Filter on High-resistivity Silicon" in Informacije Midem-Journal of Microelectronics Electronic Components and Materials, 42, no. 4 (2012):282-286, https://hdl.handle.net/21.15107/rcub_cer_1080 .