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Quantum efficiency and responsivity of InSb photodiodes utilizing the Moss-Burstein effect
(Elsevier, 1989)
In this work a detailed analysis of the quantum efficiency of InSb n+-p photodetectors produced by liquid phase epitaxy is given, in the case when the n+ region is doped to such a level that the Moss-Burstein effect plays ...
Electron transit time through depletion layer of GaInAs pn junction
(Institution of Engineering and Technology (IET), 1989)
Using an empirical formula for the electron velocity, the transist time through a Gao. 47Ino. 53As pn junction as a function of the applied voltage and other parameters is calculated. It is shown that a minimum transit ...